Karl Suss MA200   光刻機 

Karl Suss MA200 Mask Aligner


Exposure System

Resolution HR

LGO

3 m (20 m proximity)

7 m (100 m gap)

10 m (150 m gap)

Accuracy in Constant

Dose Exposure

1%

Exposure Modes Vacuum contact, hard contact, soft

contact, proximity, flood exposure

Intens ity / Uniformity*

Optics Type (1000W)

SUSS UV-Optometer

Intensity Uniformity

UV400 HR

W200

365nm 36mW/cm2

broadband 69mW/cm2 3,5%

UV400 LGO

W200

365nm 16mW/cm2

broadband 33mW/cm2 3,5%

UV400 MO

HR-IFP W200

365nm 31mW/cm2

broadband 60mW/cm2 2,5%

UV400 HR

W150

365nm 75mW/cm2

broadband 170mW/cm2 3,5%

Alignment System

Alignment Accuracy 0.5 m/3 (TSA, AutoAL, DirectAlign)

1 m/3 (TSA, AutoAL)

1 m/3 (BSA, AutoAL)

Pattern Recognition Cognex (CNL, PatMax)

Run-Out Compensation ThermAlign chuck (optional)

Large Clearfield Alignment 1 m

Prealignment Accuracy 50 m

Wafer Handling

Wafer Size 2" -200mm, round or square

Allowable Wafer Warpage 1mm

Perforated Wafers Yes

Carrier Mounted Wafers Yes

Thin Wafers without Carrier

(200mm)

Thickness: down to 120 m

Max. warpage: 5 to 6mm

Throughput 100wph

Wafer Size Conversion 5minutes

Technical Data

Utilities

Vacuum 0.2MPa (absolute)

Nitrogen/1500W LH 0.2 0.3MPa, 2.4m /h

Power/1500W LH Voltage: 400VA, 3Phase Y

Power: 2800VA, 50Hz

Compressed Air 1500 LH 0.2 0.3MPa, 2.4m /h

Reliability E-MTBF 500h

MTTR 4h

Uptime 95%

Physical Dimensions (Standard Configuration)

Height x Width x Depth 2000mm x 1509mm x 1405mm

Weight ca. 1100kg

*Typical values for 1000W HBO-lamp measured with SUSS UV-Optometer. Available values

depend on lamp power, lamp type, lamp lifetime, etc.

Data, design and specification of custom-built machines depend on individual process conditions

and can vary according to equipment configurations. Not all specifications may be

valid simultaneously. Illustrations in this brochure are not legally binding.

SUSS MicroTec reserves the right to change machine specifications without prior notice

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